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The rising demand for electric vehicles is likely to spur innovation in silicon carbide semiconductor device manufacturing, propelling the market throughout the forecast period.

The global silicon carbide semiconductor device market is expected to grow from $1.27 billion in 2022 to $1.59 billion in 2023 at a compound annual growth rate (CAGR) of 25.3%. The global silicon carbide semiconductor device market size is expected to reach $3.69 billion in 2027 at a CAGR of 23.4%.

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Global Silicon Carbide Semiconductor Device Market Segments Include:

• By Type: SIC Diode, SIC Transistor, Other Types
• By Wafer Size: 1 Inch To 4 Inches, 6 Inches, 8 Inches, 10 Inches And Above
• By End-User: Automotive, Consumer Electronics, Aerospace And Defense, Medical Devices, Data And Communication Devices, Energy And Power, Other End-Users
• By Geography: The market is segmented into North America, South America, Asia-Pacific, Eastern Europe, Western Europe, Middle East and Africa. Among these regions, Asia Pacific is the largest region in the global silicon carbide semiconductor device market in 2021.

Major Market Players in the silicon carbide semiconductor device market include Infineon Technologies, ROHM Co. Ltd., STMicroelectronics, Semiconductor Components Industries LLC, WOLFSPEED INC., Toshiba Corporation, TT Electronics PLC.

In the silicon carbide semiconductor device market, technological improvements have emerged as the primary trend gaining popularity. Major silicon carbide semiconductor device firms are exploring technological breakthroughs to strengthen their market position. For example, AIXTRON, a German company that manufactures silicon carbide semiconductor devices, will unveil the next generation G10-SiC 200 mm system for silicon carbide epitaxy with wafer technology in September 2022. The new G10-SiC 200 mm system includes a dual wafer size configuration of 9×150 and 6×200 mm. This capability is compatible with a wide range of device topologies, including single- and double-drift layer structures that meet tight 150-mm uniformity requirements for doping and thickness sigma values of less than 2%.

The Silicon Carbide Semiconductor Device Global Market Report 2023  provides a silicon carbide semiconductor device market overview for the time series: historic years (2010 – 2021) and ten years forecast (2023 – 2032). The silicon carbide semiconductor device market forecast analyzes silicon carbide semiconductor device market size, silicon carbide semiconductor device market share, leading competitor market positions. The regions covered in the report include Asia-Pacific, China, Western Europe, Eastern Europe, North America, USA, South America, Middle East and Africa and the countries include Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA.

A silicon carbide semiconductor device is composed of a silicon carbide substrate, a primary electrode, a first barrier layer, and an interconnecting layer. These devices are tiny, sturdy, and extremely efficient in the development of power electronic devices in batteries and detectors.

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